Invention Grant
- Patent Title: Resin sealed semiconductor device and manufacturing method therefor
- Patent Title (中): 树脂密封半导体器件及其制造方法
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Application No.: US12196590Application Date: 2008-08-22
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Publication No.: US07772709B2Publication Date: 2010-08-10
- Inventor: Tetsuya Ueda , Takaaki Shirasawa
- Applicant: Tetsuya Ueda , Takaaki Shirasawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-148040 20080605
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L21/48

Abstract:
A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.
Public/Granted literature
- US20090302444A1 RESIN SEALED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-12-10
Information query
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