Invention Grant
US07772719B2 Threshold voltage control circuit and internal voltage generation circuit having the same
失效
阈值电压控制电路和具有相同功能的内部电压产生电路
- Patent Title: Threshold voltage control circuit and internal voltage generation circuit having the same
- Patent Title (中): 阈值电压控制电路和具有相同功能的内部电压产生电路
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Application No.: US12012938Application Date: 2008-02-05
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Publication No.: US07772719B2Publication Date: 2010-08-10
- Inventor: Sang Il Park
- Applicant: Sang Il Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2007-0109124 20071029
- Main IPC: H02J1/10
- IPC: H02J1/10
Abstract:
A threshold voltage control circuit includes a first voltage supplying unit for supplying a first power supply voltage, in response to an enable signal which is activated when a bank is enabled, as a back bias voltage of a first MOS transistor, wherein the first MOS transistor drives an internal voltage, and a second voltage supplying unit for supplying a second power supply voltage, in response to the enable signal, as the back bias voltage of the first MOS transistor.
Public/Granted literature
- US20090108675A1 Threshold voltage control circuit and internal voltage generation circuit having the same Public/Granted day:2009-04-30
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