Invention Grant
- Patent Title: Process for producing a piezoelectric film, film forming apparatus, and piezoelectric film
- Patent Title (中): 制造压电薄膜，成膜装置和压电薄膜的方法
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Application No.: US12409185Application Date: 2009-03-23
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Publication No.: US07772747B2Publication Date: 2010-08-10
- Inventor: Takamichi Fujii , Ryuji Tsukamoto
- Applicant: Takamichi Fujii , Ryuji Tsukamoto
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2008-073032 20080321
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H05B6/00
Abstract:
A piezoelectric film is formed on a substrate by a sputtering technique at a film formation temperature higher than a Curie temperature. An electric field is formed across the piezoelectric film in a direction heading from a surface side of the piezoelectric film toward the substrate side before a temperature of the piezoelectric film having been formed falls to a temperature lower than the Curie temperature, polarization processing being caused to begin by the formation of the electric field across the piezoelectric film. The temperature of the piezoelectric film is allowed to fall to a temperature lower than the Curie temperature in the state in which the electric field is being formed.
Public/Granted literature
- US20090236949A1 PROCESS FOR PRODUCING A PIEZOELECTRIC FILM, FILM FORMING APPARATUS, AND PIEZOELECTRIC FILM Public/Granted day:2009-09-24
Information query
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