Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12128909Application Date: 2008-05-29
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Publication No.: US07772853B2Publication Date: 2010-08-10
- Inventor: Toshifumi Shimizu
- Applicant: Toshifumi Shimizu
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-141267 20070529
- Main IPC: G01R31/04
- IPC: G01R31/04 ; G01R31/02

Abstract:
Provided is a semiconductor device determining connection status between an output terminal connected to an output buffer and an external device, the semiconductor device including a test voltage generating circuit to generate test voltage for changing voltage of the output terminal, a connection detection determining circuit to compare voltage of the output terminal with reference voltage and to determine connection status of the external device based on the comparing result, and a compensation circuit generating simulation current where leak current generated at the output buffer is reproduced in a simulatory manner and compensating voltage change of the output terminal by the simulation current.
Public/Granted literature
- US20080297166A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-12-04
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