Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12412781Application Date: 2009-03-27
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Publication No.: US07772917B2Publication Date: 2010-08-10
- Inventor: Kiyoo Itoh , HIroyuki Mizuno
- Applicant: Kiyoo Itoh , HIroyuki Mizuno
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP9-045235 19970228
- Main IPC: H03K19/003
- IPC: H03K19/003

Abstract:
The well voltage of a CMOS circuit having low-threshold-voltage MOSFETs is controlled when the power supply is turned on, during normal operation, and when the supply voltage is cut off. The CMOS circuit can thus operate stably with lower power consumption, because latching-up is reduced when the supply voltage is applied to the CMOS circuit or when the supply voltage is cut off, and subthreshold current is decreased during normal operation.
Public/Granted literature
- US20090179693A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-07-16
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