Invention Grant
- Patent Title: Interferometric condition assessment system for a microelectronic structure including a semiconductor or free-metal material
- Patent Title (中): 包括半导体或自由金属材料的微电子结构的干涉条件评估系统
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Application No.: US12172629Application Date: 2008-07-14
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Publication No.: US07773230B2Publication Date: 2010-08-10
- Inventor: Paul Pfaff
- Applicant: Paul Pfaff
- Applicant Address: US OR Lake Oswego
- Assignee: Attofemto, Inc.
- Current Assignee: Attofemto, Inc.
- Current Assignee Address: US OR Lake Oswego
- Agency: Davis Wright Tremaine LLP
- Agent George C. Rondeau, Jr.
- Main IPC: G01B9/02
- IPC: G01B9/02 ; G01B9/021
Abstract:
An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferogram are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second test interferogram spaced apart from the first test interferogram.
Public/Granted literature
- US20090002717A1 CONDITION ASSESSMENT SYSTEM FOR A STRUCTURE INCLUDING A SEMICONDUCTOR MATERIAL Public/Granted day:2009-01-01
Information query
