Invention Grant
- Patent Title: ESD protection circuits for RF input pins
- Patent Title (中): RF输入引脚的ESD保护电路
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Application No.: US11533330Application Date: 2006-09-19
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Publication No.: US07773355B2Publication Date: 2010-08-10
- Inventor: Yintat Ma , Guann-Pyng Li
- Applicant: Yintat Ma , Guann-Pyng Li
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Orrick, Herrington & Sutcliffe LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributed amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.
Public/Granted literature
- US20070070564A1 ESD PROTECTION CIRCUITS FOR RF INPUT PINS Public/Granted day:2007-03-29
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