Invention Grant
- Patent Title: Semiconductor memory apparatus
- Patent Title (中): 半导体存储装置
-
Application No.: US12483482Application Date: 2009-06-12
-
Publication No.: US07773402B2Publication Date: 2010-08-10
- Inventor: Sang Park , Shin Ho Chu
- Applicant: Sang Park , Shin Ho Chu
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0051223 20060608
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C5/14 ; G11C7/00

Abstract:
A first signal input circuit outputs a first control signal in response to self-refresh and active signals. A second signal input circuit outputs a second control signal in response to the self-refresh and active signals. The power supply circuit applies a first supply voltage to an output terminal in response to the first control signal. An elevated voltage generator generates a elevated voltage by pumping a second supply voltage, and applies the elevated voltage to the output terminal, in response to the first and second control signals.
Public/Granted literature
- US20090251985A1 SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-10-08
Information query