Invention Grant
- Patent Title: Writing method and system for a phase change memory
- Patent Title (中): 相变存储器的写入方法和系统
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Application No.: US12000407Application Date: 2007-12-12
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Publication No.: US07773409B2Publication Date: 2010-08-10
- Inventor: Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
- Applicant: Ming-Jung Chen , Te-Sheng Chao , Philip H. Yeh
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW96108008A 20070308
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
Public/Granted literature
- US20080219046A1 Writing method and system for a phase change memory Public/Granted day:2008-09-11
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