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US07773409B2 Writing method and system for a phase change memory 有权
相变存储器的写入方法和系统

Writing method and system for a phase change memory
Abstract:
A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
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