Invention Grant
- Patent Title: Phase change memory and control method thereof
- Patent Title (中): 相变记忆及其控制方法
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Application No.: US12268581Application Date: 2008-11-11
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Publication No.: US07773411B2Publication Date: 2010-08-10
- Inventor: Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang , Wen-Pin Lin
- Applicant: Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang , Wen-Pin Lin
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Wang Law Firm
- Agent Li K. Wang
- Priority: TW96146499A 20071206
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A phase change memory wherein several phase change storage elements are coupled in series to share a single current source. The current provided by the current source is directed by a plurality of switches. To write/read the phase change storage elements, the invention provides techniques to control the current value generated by the current source and controls the states of the switches. The impedance summation of the phase change storage elements vary with the data stored therein.
Public/Granted literature
- US20090147566A1 Phase Change Memory And Control Method Thereof Public/Granted day:2009-06-11
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