Invention Grant
US07773412B2 Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling
有权
用于提供具有减小的单元电容耦合的非易失性存储器的方法和装置
- Patent Title: Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling
- Patent Title (中): 用于提供具有减小的单元电容耦合的非易失性存储器的方法和装置
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Application No.: US11437706Application Date: 2006-05-22
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Publication No.: US07773412B2Publication Date: 2010-08-10
- Inventor: Hagop A. Nazarian , Aaron Yip
- Applicant: Hagop A. Nazarian , Aaron Yip
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A flash memory architecture that provides a mechanism for reducing floating gate to floating gate coupling. The floating gates of the memory cells are shifted, either vertically or horizontally thereby offsetting the floating gates of the memory cells to an intervening space between the gates of adjacent memory cells. The shift of the floating gates decreases the floating gate to floating gate coupling.
Public/Granted literature
- US20070268732A1 Method and apparatus providing non-volatile memory with reduced cell capacitive coupling Public/Granted day:2007-11-22
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