Invention Grant
US07773422B2 3-level non-volatile semiconductor memory device and method of driving the same
有权
3级非易失性半导体存储器件及其驱动方法
- Patent Title: 3-level non-volatile semiconductor memory device and method of driving the same
- Patent Title (中): 3级非易失性半导体存储器件及其驱动方法
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Application No.: US12052666Application Date: 2008-03-20
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Publication No.: US07773422B2Publication Date: 2010-08-10
- Inventor: Ki-Tae Park , Jung-Dal Choi , Sung-Kyu Jo
- Applicant: Ki-Tae Park , Jung-Dal Choi , Sung-Kyu Jo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0069270 20050729; KR10-2006-0008358 20060126
- Main IPC: G11C11/04
- IPC: G11C11/04
Abstract:
A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
Public/Granted literature
- US20080165580A1 3-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME Public/Granted day:2008-07-10
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