Invention Grant
US07773652B2 Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
失效
具有改进的衍射光栅的增益耦合分布反馈半导体激光器
- Patent Title: Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
- Patent Title (中): 具有改进的衍射光栅的增益耦合分布反馈半导体激光器
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Application No.: US11475136Application Date: 2006-06-27
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Publication No.: US07773652B2Publication Date: 2010-08-10
- Inventor: Kazuhisa Takagi , Keisuke Matsumoto
- Applicant: Kazuhisa Takagi , Keisuke Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2006-045726 20060222
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which an absorption diffraction grating is located along an optical waveguide, and the diffraction grating includes a phase shift region.
Public/Granted literature
- US20070195849A1 Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating Public/Granted day:2007-08-23
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