Invention Grant
- Patent Title: Power up initialization for memory
- Patent Title (中): 启动内存初始化
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Application No.: US11399952Application Date: 2006-04-07
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Publication No.: US07774536B2Publication Date: 2010-08-10
- Inventor: Clifford Zitlaw , Frankie Fariborz Roohparvar
- Applicant: Clifford Zitlaw , Frankie Fariborz Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze P.A.
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A memory device is described that enhances initialization of the memory device. In the prior art, initialization of synchronous Flash memory requires the release of hardware signal line, RP#, or an initialization command, LCR, and a following initialization time wait period of 50 μS to 100 μS. The improved memory device of the detailed invention begins initialization of internal values upon acquiring stable power. The initialization cycle of the detailed memory loops and continues until a command is received from the host controller and is immediately available for access. This allows the utilization of the detailed memory in systems wherein the host controller cannot supply an initializing signal (RP# or LCR). The detailed memory also allows for immediate availability of the memory upon issuance of the command allowing for a fast first access.
Public/Granted literature
- US20060184782A1 Power up initialization for memory Public/Granted day:2006-08-17
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