Invention Grant
US07774536B2 Power up initialization for memory 有权
启动内存初始化

Power up initialization for memory
Abstract:
A memory device is described that enhances initialization of the memory device. In the prior art, initialization of synchronous Flash memory requires the release of hardware signal line, RP#, or an initialization command, LCR, and a following initialization time wait period of 50 μS to 100 μS. The improved memory device of the detailed invention begins initialization of internal values upon acquiring stable power. The initialization cycle of the detailed memory loops and continues until a command is received from the host controller and is immediately available for access. This allows the utilization of the detailed memory in systems wherein the host controller cannot supply an initializing signal (RP# or LCR). The detailed memory also allows for immediate availability of the memory upon issuance of the command allowing for a fast first access.
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