Invention Grant
- Patent Title: Method of preparing metal nanocrystal
- Patent Title (中): 制备金属纳米晶体的方法
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Application No.: US11652703Application Date: 2007-01-09
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Publication No.: US07780758B2Publication Date: 2010-08-24
- Inventor: Jin-hwan Park , Han-su Kim , Seok-gwang Doo , Jae-phil Cho , Hyo-jin Lee , Yoo-jung Kwon
- Applicant: Jin-hwan Park , Han-su Kim , Seok-gwang Doo , Jae-phil Cho , Hyo-jin Lee , Yoo-jung Kwon
- Applicant Address: KR Yongin-si
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2006-0041071 20060508
- Main IPC: B22F9/24
- IPC: B22F9/24 ; B82B3/00
Abstract:
Methods of preparing capped metal nanocrystals are provided. One method includes reacting a metal nanocrystal precursor with a reducing agent in a solution having a platinum catalyst.
Public/Granted literature
- US20070287288A1 Method of preparing metal nanocrystal Public/Granted day:2007-12-13
Information query
