Invention Grant
US07780782B2 Method and apparatus for growing a ribbon crystal with localized cooling
失效
用于生长具有局部冷却的带状晶体的方法和装置
- Patent Title: Method and apparatus for growing a ribbon crystal with localized cooling
- Patent Title (中): 用于生长具有局部冷却的带状晶体的方法和装置
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Application No.: US11760542Application Date: 2007-06-08
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Publication No.: US07780782B2Publication Date: 2010-08-24
- Inventor: Weidong Huang , David Harvey , Richard Wallace , Scott Reitsma
- Applicant: Weidong Huang , David Harvey , Richard Wallace , Scott Reitsma
- Applicant Address: US MA Marlborough
- Assignee: Evergreen Solar, Inc.
- Current Assignee: Evergreen Solar, Inc.
- Current Assignee Address: US MA Marlborough
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: C30B15/34
- IPC: C30B15/34
Abstract:
A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion.
Public/Granted literature
- US20080302296A1 Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling Public/Granted day:2008-12-11
Information query
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