Invention Grant
- Patent Title: High-frequency substrate and production method therefor
- Patent Title (中): 高频基板及其制造方法
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Application No.: US12096873Application Date: 2006-12-05
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Publication No.: US07780877B2Publication Date: 2010-08-24
- Inventor: Masao Tamada , Noriaki Seko , Eiji Sakata , Naoki Itoh
- Applicant: Masao Tamada , Noriaki Seko , Eiji Sakata , Naoki Itoh
- Applicant Address: JP Ibaraki JP Fukuoka
- Assignee: Japan Atomic Energy Agency,Kyushu Hitachi Maxell, Ltd.
- Current Assignee: Japan Atomic Energy Agency,Kyushu Hitachi Maxell, Ltd.
- Current Assignee Address: JP Ibaraki JP Fukuoka
- Agency: Fay Sharpe LLP
- Priority: JP2005-359923 20051214
- International Application: PCT/JP2006/324197 WO 20061205
- International Announcement: WO2007/069491 WO 20070621
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H05K3/38 ; B32B15/082

Abstract:
The high-frequency substrate is constructed of a base member and a conductor adhered to the base member, and the base member is composed of a polymer which is a fluoropolymer having a conductor-affinitive monomer graftpolymerized at a grafting percentage of 1% or less by weight. After reactive sites necessary for graftpolymerization are formed on a film of a fluoropolymer under an oxygen-free atmosphere by irradiating the film with an electron beam or the like, the fluoropolymer film is introduced into a solution of a conductor-affinitive monomer so as to cause graftpolymerization, and a conductor is adhered thereto to thereby produce a substrate, with a grafting percentage of the monomer to the fluoropolymer being 1% or less by weight in the graftpolymerization. The technique leads to the production of a high-frequency substrate having superior adhesion force with respect to the conductor.
Public/Granted literature
- US20090127517A1 HIGH-FREQUENCY SUBSTRATE AND PRODUCTION METHOD THEREFOR Public/Granted day:2009-05-21
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