Invention Grant
- Patent Title: Porous object based on silicon carbide and process for producing the same
- Patent Title (中): 基于碳化硅的多孔物体及其制造方法
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Application No.: US12194015Application Date: 2008-08-19
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Publication No.: US07781053B2Publication Date: 2010-08-24
- Inventor: Takuya Hiramatsu , Shinji Kawasaki
- Applicant: Takuya Hiramatsu , Shinji Kawasaki
- Applicant Address: JP Nagoya
- Assignee: NGX Insulators, Inc.
- Current Assignee: NGX Insulators, Inc.
- Current Assignee Address: JP Nagoya
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-045419 20060222
- Main IPC: B32B3/26
- IPC: B32B3/26 ; C04B35/64

Abstract:
Provided are a silicon carbide-based porous article comprising silicon carbide particles as an aggregate, metallic silicon and an aggregate derived from organometallic compound particles to form pores through volume shrinkage due to decomposition/conversion by heat treatment; and a method for producing the silicon carbide-based porous article, comprising, adding organometallic compound particles to form pores through volume shrinkage due to decomposition/conversion by heat treatment to a raw-material mixture containing silicon carbide particles and metallic silicon, then forming into an intended shape, calcinating and/or firing the resultant green body, forming pores through volume shrinkage due to decomposition/conversion of the organometallic compound particles, and the decomposed/converted substance of the organometallic compound particles being present as an aggregate in the porous article.
Public/Granted literature
- US20090017283A1 POROUS OBJECT BASED ON SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-01-15
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