Invention Grant
- Patent Title: Method of forming damascene structure
- Patent Title (中): 形成镶嵌结构的方法
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Application No.: US11390641Application Date: 2006-03-28
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Publication No.: US07781154B2Publication Date: 2010-08-24
- Inventor: Suketu Arun Parikh
- Applicant: Suketu Arun Parikh
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for forming a damascene structure utilizes dual hard mask layers and a thin etch stop layer, and does not require a sacrificial layer within the via. A floating etch stop layer can additionally be used. The dual hard masks may be formed of dielectric and neither of the hard masks is required to contain metal. The thin etch stop layer reduces capacitance problems.
Public/Granted literature
- US20070231750A1 Method of forming damascene structure Public/Granted day:2007-10-04
Information query
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