Semiconductor devices and methods for making such devices are provided. One such method may include forming an epitaxial layer of single crystal SiC on a single crystal Si growth substrate, forming an epitaxial diamond layer on the layer of SiC, forming a Si layer on the diamond layer, bonding a SiO2 surface of a Si carrier substrate to the Si layer, and removing the Si growth substrate to expose the SiC layer. In yet another aspect, a semiconductor layer may be deposited onto the SiC layer. The semiconductor layer may further be deposited epitaxially.