Invention Grant
- Patent Title: Method of manufacturing a semiconductor using a rigid substrate
- Patent Title (中): 使用刚性基板制造半导体的方法
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Application No.: US11516584Application Date: 2006-09-07
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Publication No.: US07781259B2Publication Date: 2010-08-24
- Inventor: Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
- Applicant: Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2003-338147 20030929
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50

Abstract:
In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
Public/Granted literature
- US20070010046A1 Semiconductor device and method for manufacturing the same Public/Granted day:2007-01-11
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