Invention Grant
- Patent Title: Method for manufacturing SOI substrate
- Patent Title (中): 制造SOI衬底的方法
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Application No.: US12277352Application Date: 2008-11-25
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Publication No.: US07781308B2Publication Date: 2010-08-24
- Inventor: Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
- Applicant: Fumito Isaka , Sho Kato , Ryu Komatsu , Kosei Nei , Akihisa Shimomura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-312668 20071203
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
Public/Granted literature
- US20090142904A1 METHOD FOR MANUFACTURING SOI SUBSTRATE Public/Granted day:2009-06-04
Information query
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