Invention Grant
- Patent Title: Silicon carbide devices and method of making
- Patent Title (中): 碳化硅器件及其制造方法
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Application No.: US11610199Application Date: 2006-12-13
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Publication No.: US07781312B2Publication Date: 2010-08-24
- Inventor: Kevin Sean Matocha , Vinayak Tilak , Stephen Daley Arthur , Zachary Matthew Stum
- Applicant: Kevin Sean Matocha , Vinayak Tilak , Stephen Daley Arthur , Zachary Matthew Stum
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Ann M. Agosti
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for fabricating a SiC MOSFET is disclosed. The method includes growing a SiC epilayer over a substrate, planarizing the SiC epilayer to provide a planarized SiC epilayer, and forming a gate dielectric layer in contact with the planarized epilayer.
Public/Granted literature
- US20080146004A1 SILICON CARBIDE DEVICES AND METHOD OF MAKING Public/Granted day:2008-06-19
Information query
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