Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11277196Application Date: 2006-03-22
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Publication No.: US07781323B2Publication Date: 2010-08-24
- Inventor: Kazuo Shimokawa , Akira Ushijima
- Applicant: Kazuo Shimokawa , Akira Ushijima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-085855 20050324
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48
Abstract:
In a semiconductor device manufacturing method which includes a mounting a semiconductor element having a bonding electrode on a substrate, the mounting includes supplying solder paste containing Au—Sn series solder particles onto the substrate, putting the semiconductor element having a film of an Sn alloy or Sn formed on the bonding electrode on the solder paste, and melting the Au—Sn series solder particles and the film of the Sn alloy or Sn to bond the semiconductor element to the substrate.
Public/Granted literature
- US20060214274A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2006-09-28
Information query
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