Method for producing electrically conductive bushings through non-conductive or semiconductive substrates

Invention Grant

US07781331B2 Method for producing electrically conductive bushings through non-conductive or semiconductive substrates 有权

Title translation: 通过非导电或半导体衬底生产导电衬套的方法

Please log in to see more content

Patent Title: Method for producing electrically conductive bushings through non-conductive or semiconductive substrates
Patent Title (中): 通过非导电或半导体衬底生产导电衬套的方法
Application No.: US12093089

Application Date: 2006-11-08
Publication No.: US07781331B2

Publication Date: 2010-08-24
Inventor: Wolfgang Reinert
Applicant: Wolfgang Reinert
Applicant Address: DE Munich
Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
Current Assignee Address: DE Munich
Agency: Duane Morris LLP
Priority: DE102005053494 20051109
International Application: PCT/EP2006/068247 WO 20061108
International Announcement: WO2007/054521 WO 20070518
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/44

Method for producing electrically conductive bushings through non-conductive or semiconductive substrates

Abstract:

The present invention relates to a method for producing electrical bushings through non-conductive or semiconductive substrates, which are particularly suitable for electrical applications. The method is characterized in that a semiconductor substrate or a non-conductive substrate (13) whose front side has an electrically conductive contact point (6) at at least one location is provided with a recess (7) from its rear side such that the recess (1) on the front side of the substrate ends under that location or one of the locations at which the electrically conductive contact point or one of the electrically conductive contact points is situated and is completely covered by the latter, to which an electrically conductive structure (9) which establishes a conductive connection between the respective contact point and the rear-side surface (10, 11, 12) of the substrate through the recess or at least one of the recesses is applied from the rear side of the substrate. The invention also relates to substrates and components having a design that is predetermined by the method according to the invention.

Abstract(Chinese):

本发明涉及一种通过非导电或半导体衬底生产电气衬套的方法，其特别适用于电气应用。该方法的特征在于，在其至少一个位置处其前侧具有导电接触点（6）的半导体衬底或非导电衬底（13）从其后侧设置有凹部（7），使得衬底正面的凹槽（1）在该位置或导电接触点或导电接触点之一的位置之一处终止，并且由导电接触点或导电接触点之一完全覆盖，导电接触点通过凹部或至少一个凹部在基板的相应接触点和后侧表面（10,11,12）之间建立导电连接的结构（9）从基板的后侧施加。本发明还涉及具有通过根据本发明的方法预定的设计的基底和部件。

Public/Granted literature

US20080233740A1 Method for Producing Electrically Conductive Bushings Through Non-Conductive or Semiconductive Substrates Public/Granted day:2008-09-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）