An electrode is formed in a hole extending partway into the substrate of a semiconductor device by depositing an insulating film and a barrier metal layer on the substrate surface and the interior of the hole, then filling the hole with a layer of electrode material that also covers the substrate surface. Next, the electrode material exterior to the hole is removed by wet etching, using an etchant that does not etch the barrier metal. The barrier metal exterior to the hole is then removed by wet etching, using an etchant that does not etch the electrode material. This process eliminates the need for expensive chemical mechanical polishing.