Invention Grant
- Patent Title: Semiconductor substrate having a protection layer at the substrate back side
- Patent Title (中): 在衬底背面具有保护层的半导体衬底
-
Application No.: US11757575Application Date: 2007-06-04
-
Publication No.: US07781343B2Publication Date: 2010-08-24
- Inventor: Tobias Letz , Holger Schuehrer , Markus Nopper
- Applicant: Tobias Letz , Holger Schuehrer , Markus Nopper
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102006056598 20061130
- Main IPC: H01L21/311
- IPC: H01L21/311

Abstract:
By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.
Public/Granted literature
- US20080132072A1 SEMICONDUCTOR SUBSTRATE HAVING A PROTECTION LAYER AT THE SUBSTRATE BACK SIDE Public/Granted day:2008-06-05
Information query
IPC分类: