Invention Grant
- Patent Title: Semiconductor device having multiple-layer hard mask with opposite stresses and method for fabricating the same
- Patent Title (中): 具有相反应力的多层硬掩模的半导体器件及其制造方法
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Application No.: US11823772Application Date: 2007-06-28
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Publication No.: US07781347B2Publication Date: 2010-08-24
- Inventor: Jung-Seock Lee , Ki-Won Nam
- Applicant: Jung-Seock Lee , Ki-Won Nam
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2006-0134341 20061227
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A semiconductor device includes a hard mask including a first layer and a second layer in contact with each other and having opposite stress types, wherein a difference between initial stresses of the first layer and the second layer is increased so that after a thermal process, the difference between the final stresses of the first and second layer becomes smaller, to reduce the likelihood of peeling of the first or second layer. The initial stress of the first layer includes a compressive stress and the initial stress of the second layer includes a tensile stress.
Public/Granted literature
Information query
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