Invention Grant
- Patent Title: Method for forming inorganic silazane-based dielectric film
- Patent Title (中): 形成无机硅氮烷基电介质膜的方法
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Application No.: US11759159Application Date: 2007-06-06
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Publication No.: US07781352B2Publication Date: 2010-08-24
- Inventor: Atsuki Fukazawa , Nobuo Matsuki , Jeongseok Ha
- Applicant: Atsuki Fukazawa , Nobuo Matsuki , Jeongseok Ha
- Applicant Address: JP Tokyo
- Assignee: ASM Japan K.K.
- Current Assignee: ASM Japan K.K.
- Current Assignee Address: JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.
Public/Granted literature
- US20080305648A1 METHOD FOR FORMING INORGANIC SILAZANE-BASED DIELECTRIC FILM Public/Granted day:2008-12-11
Information query
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