Invention Grant
- Patent Title: High-frequency dielectric material
- Patent Title (中): 高频电介质材料
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Application No.: US12295433Application Date: 2007-04-16
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Publication No.: US07781359B2Publication Date: 2010-08-24
- Inventor: Takahiro Yamakawa , Shi Luo
- Applicant: Takahiro Yamakawa , Shi Luo
- Applicant Address: JP Tokyo-To
- Assignee: Yokowo Co., Ltd.
- Current Assignee: Yokowo Co., Ltd.
- Current Assignee Address: JP Tokyo-To
- Agency: The Webb Law Firm
- Priority: JP2006-113046 20060417
- International Application: PCT/JP2007/058686 WO 20070416
- International Announcement: WO2007/123221 WO 20071101
- Main IPC: C04B35/465
- IPC: C04B35/465 ; C04B35/499

Abstract:
There is provided a high-frequency dielectric material that has a high relative permittivity, a high Q value, and a TCF property value close to zero (0) and can realize co-firing of the dielectric material with silver (Ag) and copper (Cu). The high-frequency dielectric material is characterized by comprising a composition of main constituent materials having a formulation of CaO: 1 mole, Nb2O5: (1−α×β)/3 mole, ZnO: (1−α)/3 mole, TiO2: γ mole, and Li2O: α×(1−β)/6 mole, wherein 0.65≦α≦0.75, 0.09≦β≦0.15, 0.066≦α×β≦0.100, and 0.15≦γ≦0.35; and 1 to 5 parts by weight, based on 100 parts by weight of the composition of main constituent materials, of a sintering aid selected from the group consisting of oxides of copper (Cu), boron (B), lithium (Li), bismuth (Bi), and vanadium (V) and a mixture of two or more of the oxides.
Public/Granted literature
- US20090124482A1 High-Frequency Dielectric Material Public/Granted day:2009-05-14
Information query
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