Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes

Invention Grant

US07781801B2 Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes 失效

Title translation: 场效应晶体管的栅电极位于半导体异质结构和源极和漏极部分之上

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Patent Title: Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
Patent Title (中): 场效应晶体管的栅电极位于半导体异质结构和源极和漏极部分之上
Application No.: US11526968

Application Date: 2006-09-25
Publication No.: US07781801B2

Publication Date: 2010-08-24
Inventor: Robert L Willett
Applicant: Robert L Willett
Applicant Address: US NJ Murray Hill
Assignee: Alcatel-Lucent USA Inc.
Current Assignee: Alcatel-Lucent USA Inc.
Current Assignee Address: US NJ Murray Hill
Agent John F. McCabe
Main IPC: H01L29/00
IPC: H01L29/00

Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes

Abstract:

An apparatus includes a field-effect transistor (FET). The FET includes a region of first semiconductor and a layer of second semiconductor that is located on the region of the first semiconductor. The layer and region form a semiconductor heterostructure. The FET also includes source and drain electrodes that are located on one of the region and the layer and a gate electrode located to control a conductivity of a channel portion of the semiconductor heterostructure. The channel portion is located between the source and drain electrodes. The gate electrode is located vertically over the channel portion and portions of the source and drain electrodes.

Abstract(Chinese):

一种装置包括场效应晶体管（FET）。 FET包括位于第一半导体区域上的第一半导体区域和第二半导体层。该层和区域形成半导体异质结构。 FET还包括位于该区域和该层之一上的源电极和漏电极，以及位于该半导体异质结构的通道部分的导电性的栅电极。沟道部分位于源极和漏极之间。栅电极位于沟道部分和源电极和漏电极的部分之上。

Public/Granted literature

US20080073668A1 Field-effect heterostructure transistors Public/Granted day:2008-03-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）