Invention Grant
- Patent Title: Semiconductor range-finding element and solid-state imaging device
- Patent Title (中): 半导体测距元件和固态成像装置
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Application No.: US12065156Application Date: 2006-08-30
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Publication No.: US07781811B2Publication Date: 2010-08-24
- Inventor: Shoji Kawahito , Mitsuru Homma
- Applicant: Shoji Kawahito , Mitsuru Homma
- Applicant Address: JP Shizuoka-shi JP Osaka-shi
- Assignee: National University Corporation Shizuoka University,Sharp Kabushiki Kaisha
- Current Assignee: National University Corporation Shizuoka University,Sharp Kabushiki Kaisha
- Current Assignee Address: JP Shizuoka-shi JP Osaka-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-250298 20050830
- International Application: PCT/JP2006/317131 WO 20060830
- International Announcement: WO2007/026779 WO 20070308
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.
Public/Granted literature
- US20090134396A1 SEMICONDUCTOR RANGE-FINDING ELEMENT AND SOLID-STATE IMAGING DEVICE Public/Granted day:2009-05-28
Information query
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