Invention Grant
- Patent Title: Ferroelectric memory device and method for manufacturing ferroelectric memory device
- Patent Title (中): 铁电存储器件及制造铁电存储器件的方法
-
Application No.: US11685360Application Date: 2007-03-13
-
Publication No.: US07781813B2Publication Date: 2010-08-24
- Inventor: Hiroaki Tamura , Shuji Tsuruta
- Applicant: Hiroaki Tamura , Shuji Tsuruta
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-069095 20060314
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a direction.
Public/Granted literature
- US20070215923A1 FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE Public/Granted day:2007-09-20
Information query
IPC分类:
