Invention Grant
US07781815B2 Thin-film element, display device and memory cell using the thin-film element, and their fabrication methods
有权
薄膜元件，显示器件和使用该薄膜元件的存储单元及其制造方法
- Patent Title: Thin-film element, display device and memory cell using the thin-film element, and their fabrication methods
- Patent Title (中): 薄膜元件，显示器件和使用该薄膜元件的存储单元及其制造方法
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Application No.: US11915171Application Date: 2006-06-15
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Publication No.: US07781815B2Publication Date: 2010-08-24
- Inventor: Hiroyuki Moriwaki
- Applicant: Hiroyuki Moriwaki
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye P.C.
- Priority: JP2005-263058 20050909
- International Application: PCT/JP2006/312071 WO 20060615
- International Announcement: WO2007/029394 WO 20070315
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
Pixel auxiliary capacitors (10) and pixel TFTs, which are thin-film elements, are formed on a substrate a lower electrode (Si) (3), insulating film, and an upper electrode (GE) (5) in this order. Each upper electrode (GE) (5) opposing to the corresponding lower electrode (Si) (3) is entirely enclosed within the outline of the lower electrode (Si) (3) in a plane view. Thus, it is possible to provide thin-film elements, which are not affected by edges of the lower electrode (Si) (3), a display device and a memory cell using the thin-film elements, and their fabrication methods.
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