Semiconductor devices having a contact plug and fabrication methods thereof

Invention Grant

US07781819B2 Semiconductor devices having a contact plug and fabrication methods thereof 有权

Title translation: 具有接触塞的半导体器件及其制造方法

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Patent Title: Semiconductor devices having a contact plug and fabrication methods thereof
Patent Title (中): 具有接触塞的半导体器件及其制造方法
Application No.: US12270286

Application Date: 2008-11-13
Publication No.: US07781819B2

Publication Date: 2010-08-24
Inventor: Wan-don Kim , Jin-yong Kim , Yong-suk Tak , Jung-hee Chung , Ki-chul Kim , Oh-seong Kwon
Applicant: Wan-don Kim , Jin-yong Kim , Yong-suk Tak , Jung-hee Chung , Ki-chul Kim , Oh-seong Kwon
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Myers Bigel Sibley & Sajovec, P.A.
Priority: KR10-2001-0030529 20010531; KR10-2008-0015492 20080220
Main IPC: H01L29/92
IPC: H01L29/92

Semiconductor devices having a contact plug and fabrication methods thereof

Abstract:

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hole. A second contact plug buries the contact hole and is formed on the first contact plug. A conductive layer is connected to the first contact plug and the second contact plug. The bottom thickness of the first contact plug formed on the bottom of the contact hole is thicker than the inner wall thickness of the first contact plug formed on the inner wall of the contact hole.

Abstract(Chinese):

提供半导体器件及其制造方法。半导体器件包括形成在支撑层上并具有接触孔的绝缘层。第一接触塞形成在接触孔的内壁和底部上。第二接触插塞将接触孔埋入并形成在第一接触插塞上。导电层连接到第一接触插塞和第二接触插塞。形成在接触孔底部的第一接触塞的底部厚度比形成在接触孔的内壁上的第一接触塞的内壁厚度大。

Public/Granted literature

US20090072350A1 SEMICONDUCTOR DEVICES HAVING A CONTACT PLUG AND FABRICATION METHODS THEREOF Public/Granted day:2009-03-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器