An integrated circuit including a floating body transistor and method. One embodiment provides a transistor including a body region formed in a first portion and a first and a second source/drain region formed in a second and a third portion. The body region is formed in a semiconductor substrate. The integrated circuit further includes a buried structure disposed at least below the body region and a first and a second insulating structure including an insulating material and being disposed at least between the body region and regions of the second and the third portion below the first and the second source drain region, wherein the first and the second insulating structure contact the buried structure.