Invention Grant
- Patent Title: System and method to reduce noise in a substrate
- Patent Title (中): 降低衬底噪声的系统和方法
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Application No.: US10801260Application Date: 2004-03-15
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Publication No.: US07781841B2Publication Date: 2010-08-24
- Inventor: Ichiro Fujimori
- Applicant: Ichiro Fujimori
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
Certain embodiments of the invention may be found in, for example, a system that reduces noise in a substrate of a chip and may comprise a substrate layer that is integrated within the chip. A transistor layer is integrated within the chip and is shielded from the substrate layer by a shielding layer. At least one transistor of a first transistor type couples the transistor layer to the shielding layer and a quiet voltage source may be coupled to the transistor of the first transistor type. At least one transistor of a second transistor type is coupled to the shielding layer. The transistor of the second transistor type may be a n-type transistor, which may be disposed within the transistor layer and the transistor of the second transistor type may be resistively coupled to the shielding layer.
Public/Granted literature
- US20040173852A1 System and method to reduce noise in a substrate Public/Granted day:2004-09-09
Information query
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