Invention Grant
- Patent Title: Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
- Patent Title (中): 等离子体增强型电磁辐射发射装置及其制造方法
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Application No.: US11881266Application Date: 2007-07-26
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Publication No.: US07781853B2Publication Date: 2010-08-24
- Inventor: David A. Fattal , Nathaniel J. Quitoriano , Hans S. Cho , Marco Fiorentino , Theodore I. Kamins
- Applicant: David A. Fattal , Nathaniel J. Quitoriano , Hans S. Cho , Marco Fiorentino , Theodore I. Kamins
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/12 ; H01L27/14 ; H01L31/00

Abstract:
Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.
Public/Granted literature
- US20090028493A1 Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same Public/Granted day:2009-01-29
Information query
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