Invention Grant
- Patent Title: Silicon-based visible and near-infrared optoelectric devices
- Patent Title (中): 硅基可见光和近红外光电器件
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Application No.: US12365492Application Date: 2009-02-04
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Publication No.: US07781856B2Publication Date: 2010-08-24
- Inventor: Eric Mazur , James E. Carey, III
- Applicant: Eric Mazur , James E. Carey, III
- Applicant Address: US MA Cambridge
- Assignee: President and Fellows of Harvard College
- Current Assignee: President and Fellows of Harvard College
- Current Assignee Address: US MA Cambridge
- Agency: Nutter McClennen & Fish LLP
- Agent Thomas J. Engellenner; Reza Mollaaghababa
- Main IPC: H01L31/06
- IPC: H01L31/06

Abstract:
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
Public/Granted literature
- US20090146240A1 SILICON-BASED VISIBLE AND NEAR-INFRARED OPTOELECTRIC DEVICES Public/Granted day:2009-06-11
Information query
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