Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US10550796Application Date: 2004-03-30
-
Publication No.: US07781861B2Publication Date: 2010-08-24
- Inventor: Hideki Mori , Hirokazu Ejiri , Kenji Azami , Terukazu Ohno , Nobuyuki Yoshitake
- Applicant: Hideki Mori , Hirokazu Ejiri , Kenji Azami , Terukazu Ohno , Nobuyuki Yoshitake
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2003-096093 20030331
- International Application: PCT/JP2004/004490 WO 20040330
- International Announcement: WO2004/088747 WO 20041014
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
By stably separating a melting location of a fuse (3) from conductive layers (5A, 5B), reliable melting of the fuse (3) is enabled. A fuse (3) including a fuse body (3A) and two pads (3Ba, 3Bb) connected by this and two conductive layers (5A, 5B) individually connected to the two pads (3Ba, 3Bb) are formed in a multilayer structure on a semiconductor substrate (1). A length of the fuse body (3A) is defined so that the melting location of the fuse (3) becomes positioned in the fuse body (3A) away from the region overlapped on the conductive layer (5A or 5B) when an electrical stress is applied between two conductive layers (5A, 5B) and the fuse (3) is melted.
Public/Granted literature
- US20060263986A1 Semiconductor device Public/Granted day:2006-11-23
Information query
IPC分类: