Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US12007084Application Date: 2008-01-07
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Publication No.: US07781863B2Publication Date: 2010-08-24
- Inventor: Ryotaro Yagi , Yuichi Nakao , Isamu Nishimura
- Applicant: Ryotaro Yagi , Yuichi Nakao , Isamu Nishimura
- Applicant Address: JP Kyoto
- Assignee: ROHM Co., Ltd.
- Current Assignee: ROHM Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, PC
- Priority: JP2007-001526 20070109
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02
Abstract:
The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.
Public/Granted literature
- US20080164565A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-07-10
Information query
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