Invention Grant
- Patent Title: Semiconductor device having rectifying action
- Patent Title (中): 具有整流作用的半导体装置
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Application No.: US11498793Application Date: 2006-08-04
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Publication No.: US07781869B2Publication Date: 2010-08-24
- Inventor: Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
- Applicant: Tomoki Inoue , Koichi Sugiyama , Hideaki Ninomiya , Tsuneo Ogura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-351374 20021203
- Main IPC: H01L31/075
- IPC: H01L31/075 ; H01L27/095
Abstract:
A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.
Public/Granted literature
- US20060267129A1 Semiconductor device having rectifying action Public/Granted day:2006-11-30
Information query
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