Invention Grant
- Patent Title: Semiconductor device including an interconnect
- Patent Title (中): 包括互连的半导体器件
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Application No.: US12178307Application Date: 2008-07-23
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Publication No.: US07781887B2Publication Date: 2010-08-24
- Inventor: Alois Nitsch
- Applicant: Alois Nitsch
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a first die, a substrate, and a first interconnect. The first die includes a first isolation region and a first contact at least partially overlapping the first isolation region. The substrate includes a second contact. The first interconnect couples the first contact to the second contact. The first interconnect is defined by a via through the first isolation region.
Public/Granted literature
- US20080277801A1 Semiconductor component and production method Public/Granted day:2008-11-13
Information query
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