An improved interconnect structure and method of making such a device. The improved interconnect electrically connects two otherwise separate areas on a semiconductor wafer. The interconnect preferably uses a copper conductor disposed within a trench and via structure formed in a low-k hybrid dielectric layer using a dual damascene process. Each contact region is served by a plurality of vias, each in communication with the trench conductor portion. The entry from the trench to the via is rounded for at least one and preferably all of the via structures.