The characteristic of the semiconductor device of this invention is that the device has a piercing hole 10 formed in the semiconductor layer to touch a first metal film 18, a insulating film 12 formed on the side wall of the piercing hole 10, a second metal film 13 disposed on the first metal film 18 at the bottom of the piercing hole 10 where the insulating film 12 has not been formed and on the semiconductor layer, a barrier metal film 14 formed on the insulating film 12 in the piercing hole 10 and on the first metal film 18, and a wiring layer 15 formed inside the piercing hole 10 through the barrier metal film 14.