Invention Grant
- Patent Title: Semiconductor device and process for fabrication thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12138637Application Date: 2008-06-13
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Publication No.: US07781896B2Publication Date: 2010-08-24
- Inventor: Shinji Takeda , Takashi Masuko , Masami Yusa , Tooru Kikuchi , Yasuo Miyadera , Iwao Maekawa , Mitsuo Yamasaki , Akira Kageyama , Aizou Kaneda
- Applicant: Shinji Takeda , Takashi Masuko , Masami Yusa , Tooru Kikuchi , Yasuo Miyadera , Iwao Maekawa , Mitsuo Yamasaki , Akira Kageyama , Aizou Kaneda
- Applicant Address: JP Tokyo
- Assignee: Hitachi Chemical Co., Ltd.
- Current Assignee: Hitachi Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Griffin & Szipl, P.C.
- Priority: JP7-171154 19950706
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/00
Abstract:
A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250° C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.
Public/Granted literature
- US20080290529A1 SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATION THEREOF Public/Granted day:2008-11-27
Information query
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