Invention Grant
- Patent Title: High temperature photonic structure for tungsten filament
- Patent Title (中): 钨丝高温光子结构
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Application No.: US11642193Application Date: 2006-12-20
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Publication No.: US07781977B2Publication Date: 2010-08-24
- Inventor: Deeder M. Aurongzeb
- Applicant: Deeder M. Aurongzeb
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Fay Sharpe LLP
- Main IPC: H01J17/04
- IPC: H01J17/04

Abstract:
The invention is directed to a process for the creation of a photonic lattice on the surface of an emissive substrate comprising first depositing a thin film metal layer on at least one surface of the substrate, the thin film metal comprising a metal having a melting point lower than the melting point of the substrate, then annealing the thin film metal layer and the substrate to create nano-particles on the substrate surface, and anodizing or plasma etching the annealed thin film metal and substrate to create pores in the nano-particles and the substrate such that upon exposure to high temperature the emissivity of the substrate is refocused to generate emissions in the visible and lower infrared region and to substantially eliminate higher infrared emission, and to the substrate thus created.
Public/Granted literature
- US20080152943A1 High temperature photonic structure for tungstein filament Public/Granted day:2008-06-26
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