Invention Grant
- Patent Title: Optical method for the characterization of laterally-patterned samples in integrated circuits
- Patent Title (中): 用于表征集成电路中横向图案化样品的光学方法
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Application No.: US12381640Application Date: 2009-03-13
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Publication No.: US07782471B2Publication Date: 2010-08-24
- Inventor: Humphrey J. Maris
- Applicant: Humphrey J. Maris
- Applicant Address: US RI Providence
- Assignee: Brown University
- Current Assignee: Brown University
- Current Assignee Address: US RI Providence
- Agency: Harrington & Smith
- Main IPC: G01B11/28
- IPC: G01B11/28

Abstract:
Disclosed is a method for characterizing a sample having a structure disposed on or within the sample, comprising the steps of applying a first pulse of light to a surface of the sample for creating a propagating strain pulse in the sample, applying a second pulse of light to the surface so that the second pulse of light interacts with the propagating strain pulse in the sample, sensing from a reflection of the second pulse a change in optical response of the sample, and relating a time of occurrence of the change in optical response to at least one dimension of the structure.
Public/Granted literature
- US20090213375A1 Optical method for the characterization of laterally-patterned samples in integrated circuits Public/Granted day:2009-08-27
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