Invention Grant
US07782471B2 Optical method for the characterization of laterally-patterned samples in integrated circuits 有权
用于表征集成电路中横向图案化样品的光学方法

  • Patent Title: Optical method for the characterization of laterally-patterned samples in integrated circuits
  • Patent Title (中): 用于表征集成电路中横向图案化样品的光学方法
  • Application No.: US12381640
    Application Date: 2009-03-13
  • Publication No.: US07782471B2
    Publication Date: 2010-08-24
  • Inventor: Humphrey J. Maris
  • Applicant: Humphrey J. Maris
  • Applicant Address: US RI Providence
  • Assignee: Brown University
  • Current Assignee: Brown University
  • Current Assignee Address: US RI Providence
  • Agency: Harrington & Smith
  • Main IPC: G01B11/28
  • IPC: G01B11/28
Optical method for the characterization of laterally-patterned samples in integrated circuits
Abstract:
Disclosed is a method for characterizing a sample having a structure disposed on or within the sample, comprising the steps of applying a first pulse of light to a surface of the sample for creating a propagating strain pulse in the sample, applying a second pulse of light to the surface so that the second pulse of light interacts with the propagating strain pulse in the sample, sensing from a reflection of the second pulse a change in optical response of the sample, and relating a time of occurrence of the change in optical response to at least one dimension of the structure.
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