Invention Grant
- Patent Title: Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer
- Patent Title (中): 具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
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Application No.: US11698180Application Date: 2007-01-26
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Publication No.: US07782575B2Publication Date: 2010-08-24
- Inventor: Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
- Applicant: Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-244678 20060908; JP2006-275972 20061010
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
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