Invention Grant
US07782577B2 MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
有权
用于抗铁磁体的牺牲层的MRAM结构及其制造方法
- Patent Title: MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture
- Patent Title (中): 用于抗铁磁体的牺牲层的MRAM结构及其制造方法
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Application No.: US11448170Application Date: 2006-06-06
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Publication No.: US07782577B2Publication Date: 2010-08-24
- Inventor: Wolfgang Raberg , Ulrich Klostermann
- Applicant: Wolfgang Raberg , Ulrich Klostermann
- Applicant Address: DE Munich FR Corbeil Essonnes
- Assignee: Infineon Technologies AG,ALTIS Semiconductor, SNC
- Current Assignee: Infineon Technologies AG,ALTIS Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/33
Abstract:
A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.
Public/Granted literature
- US20070278602A1 MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture Public/Granted day:2007-12-06
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